STB75NH02LT4

Obsolete

STMicroelectronics

MOSFET N-CH 24V 60A D2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 24V 60A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB75NH02LT4

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	2050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type
STMicroelectronics STB75NH02LT4	22 nC	24 V	Surface Mount	MOSFET (Metal Oxide)	8 mOhm	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2050 pF	10 V	5 V	D2PAK	80 W	-55 °C	175 ░C	60 A	1.8 V	N-Channel

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General part information

N-Channel 24 V 60A (Tc) 80W (Tc) Surface Mount D2PAK

Technical documentation and resources