IS25LP128F-JLLA3-TR

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ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/QUAD 8WSON

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IS25LP128F-JLLA3-TR

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ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/QUAD 8WSON

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Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	4000	$ 2.20

Description

General part information

IS25LP128 Series

FLASH - NOR (SLC) Memory IC 128Mbit SPI - Quad I/O, QPI, DTR 166 MHz 6.5 ns 8-WSON (8x6)

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Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	IS25LP128F-JLLA3-TR	IS25LP128 Series

Access Time	6.5 ns	6.5 ns
Clock Frequency	166 MHz	133 - 166 MHz
Grade	Automotive	Automotive
Memory Format	FLASH	FLASH
Memory Interface	Quad I/O, QPI, SPI, DTR	Quad I/O, QPI, SPI, DTR
Memory Organization	16M x 8	16M x 8
Memory Size	128 Mb	128 Mb
Memory Type	Non-Volatile	Non-Volatile
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	125 °C	105 - 125 °C
Operating Temperature [Min]	-40 °C	-40 °C
Package / Case	8-WDFN Exposed Pad	16-SOIC, 8-WDFN Exposed Pad, 8-SOIC
Package / Case	-	0.209 - 0.295 in
Package / Case	-	5.3 - 7.5 mm
Qualification	AEC-Q100	AEC-Q100
Supplier Device Package	8-WSON (8x6)	16-SOIC, 8-WSON (6x5), 8-SOIC, 8-WSON (8x6)
Technology	FLASH - NOR (SLC)	FLASH - NOR, FLASH - NOR (SLC)
Voltage - Supply [Max]	3.6 V	3.6 V
Voltage - Supply [Min]	2.3 V	2.3 V
Write Cycle Time - Word, Page	-	1 - 800 ms
Write Cycle Time - Word, Page [custom]	40 µs	40 µs
Write Cycle Time - Word, Page [custom]	800 µs	800 µs

IS25LP128 Series

IC FLASH 128MBIT SPI/QUAD 16SOIC

Part	Memory Interface	Memory Format	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Type	Package / Case [x]	Package / Case	Package / Case [y]	Memory Size	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Clock Frequency	Technology	Supplier Device Package	Write Cycle Time - Word, Page	Memory Organization	Grade	Qualification	Access Time	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
ISSI, Integrated Silicon Solution Inc IS25LP128-JMLE-TR	QPI, Quad I/O, SPI	FLASH	2.3 V	3.6 V	Non-Volatile	0.295 in	16-SOIC	7.5 mm	128 Mb	Surface Mount	105 °C	-40 °C	133 MHz	FLASH - NOR	16-SOIC	1 ms	16M x 8
ISSI, Integrated Silicon Solution Inc IS25LP128F-JKLE	DTR, QPI, Quad I/O, SPI	FLASH	2.3 V	3.6 V	Non-Volatile		8-WDFN Exposed Pad		128 Mb	Surface Mount	105 °C	-40 °C	133 MHz	FLASH - NOR	8-WSON (6x5)	800 µs	16M x 8	Automotive	AEC-Q100
ISSI, Integrated Silicon Solution Inc IS25LP128-JBLE-TR	QPI, Quad I/O, SPI	FLASH	2.3 V	3.6 V	Non-Volatile	0.209 "	8-SOIC	5.3 mm	128 Mb	Surface Mount	105 °C	-40 °C	133 MHz	FLASH - NOR	8-SOIC	1 ms	16M x 8
ISSI, Integrated Silicon Solution Inc IS25LP128-JBLE	QPI, Quad I/O, SPI	FLASH	2.3 V	3.6 V	Non-Volatile	0.209 "	8-SOIC	5.3 mm	128 Mb	Surface Mount	105 °C	-40 °C	133 MHz	FLASH - NOR	8-SOIC	1 ms	16M x 8
ISSI, Integrated Silicon Solution Inc IS25LP128F-RMLE	DTR, QPI, Quad I/O, SPI	FLASH	2.3 V	3.6 V	Non-Volatile	0.295 in	16-SOIC	7.5 mm	128 Mb	Surface Mount	105 °C	-40 °C	133 MHz	FLASH - NOR	16-SOIC	800 µs	16M x 8
ISSI, Integrated Silicon Solution Inc IS25LP128-JKLE-TR	QPI, Quad I/O, SPI	FLASH	2.3 V	3.6 V	Non-Volatile		8-WDFN Exposed Pad		128 Mb	Surface Mount	105 °C	-40 °C	133 MHz	FLASH - NOR	8-WSON (6x5)	1 ms	16M x 8
ISSI, Integrated Silicon Solution Inc IS25LP128F-RMLE-TR	DTR, QPI, Quad I/O, SPI	FLASH	2.3 V	3.6 V	Non-Volatile	0.295 in	16-SOIC	7.5 mm	128 Mb	Surface Mount	105 °C	-40 °C	133 MHz	FLASH - NOR	16-SOIC	800 µs	16M x 8
ISSI, Integrated Silicon Solution Inc IS25LP128F-JLLA3-TR	DTR, QPI, Quad I/O, SPI	FLASH	2.3 V	3.6 V	Non-Volatile		8-WDFN Exposed Pad		128 Mb	Surface Mount	125 °C	-40 °C	166 MHz	FLASH - NOR (SLC)	8-WSON (8x6)		16M x 8	Automotive	AEC-Q100	6.5 ns	40 µs	800 µs
ISSI, Integrated Silicon Solution Inc IS25LP128F-JLLE-TR	DTR, QPI, Quad I/O, SPI	FLASH	2.3 V	3.6 V	Non-Volatile		8-WDFN Exposed Pad		128 Mb	Surface Mount	105 °C	-40 °C	133 MHz	FLASH - NOR	8-WSON (8x6)	800 µs	16M x 8