Technical Specifications
Parameters and characteristics for this part
| Specification | STLD128DNT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 4 A |
| Current - Collector Cutoff (Max) [Max] | 250 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 8 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 20 W |
| Supplier Device Package | DPAK |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL128DN Series
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
Documents
Technical documentation and resources