The L638xE and L639x are high voltage devices manufactured with the BCD™ "offline" technology. They are single chip half-bridge gate drivers for N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for the easy interfacing microcontroller and up to 15 V for Hall-effect interfaces.

The integrated bootstrap diode allows a more compact and cost-effective design, but the use of the external diode is still possible in case of specific requirements.Read more