VT6X12T2R

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Rohm Semiconductor

NPN+NPN GENERAL PURPOSE AMPLIFIC

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Rohm Semiconductor

NPN+NPN GENERAL PURPOSE AMPLIFIC

Technical Specifications

Parameters and characteristics for this part

Specification	VT6X12T2R

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	350 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Supplier Device Package	VMT6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

NPN+NPN GENERAL PURPOSE AMPLIFIC

Part	Operating Temperature	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case
Rohm Semiconductor VT6X12T2R	150 °C	350 MHz	300 mV	100 nA	Surface Mount	50 V	100 mA	2 NPN (Dual)	120	VMT6	6-SMD, Flat Leads

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General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 350MHz 150mW Surface Mount VMT6

Technical documentation and resources