RN1102ACT(TPL3)

Obsolete

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.08A CST3

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Obsolete

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.08A CST3

Technical Specifications

Parameters and characteristics for this part

Specification	RN1102ACT(TPL3)

Current - Collector (Ic) (Max) [Max]	80 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Mounting Type	Surface Mount
Package / Case	SOT-883, SC-101
Power - Max [Max]	100 mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	CST3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package
Toshiba Semiconductor and Storage RN1102ACT(TPL3)	10 kOhms	Surface Mount	500 nA	100 mW	80 mA	NPN - Pre-Biased	150 mV	10 kOhms	50 V	SC-101 SOT-883	50	CST3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3

Technical documentation and resources

No documents available