BSC105N10LSFGATMA1

Obsolete

Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 PACKAGE; 10.5 MOHM;

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BSC105N10LSFGATMA1

Obsolete

Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 PACKAGE; 10.5 MOHM;

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC105N10LSFGATMA1

Current - Continuous Drain (Id) @ 25°C	90 A, 11.4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

BSC105 Series

Part	Vgs (Max)	FET Type	Supplier Device Package	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
Infineon Technologies BSC105N10LSFGATMA1	20 V	N-Channel	PG-TDSON-8-1	MOSFET (Metal Oxide)	156 W	10.5 mOhm	Surface Mount	4.5 V 10 V	11.4 A 90 A	2.4 V	-55 °C	150 °C	3900 pF	8-PowerTDFN	53 nC	100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BSC105 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

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