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RS3GB-T - DO214

RS3GB-T

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO214AA

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RS3GB-T - DO214

RS3GB-T

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO214AA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRS3GB-T
Capacitance @ Vr, F50 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSMB, DO-214AA
Reverse Recovery Time (trr)150 ns
Speed200 mA, 500 ns
Supplier Device PackageSMB
Supplier Device PackageDO-214AA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.39
Digi-Reel® 1$ 0.39
Tape & Reel (TR) 3000$ 0.09
6000$ 0.08
9000$ 0.07
30000$ 0.07
75000$ 0.06
150000$ 0.06

Description

General part information

RS3G Series

Diode 400 V 3A Surface Mount DO-214AA (SMB)

Documents

Technical documentation and resources