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STD3N62K3 - MFG_DPAK(TO252-3)

STD3N62K3

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STMicroelectronics

N-CHANNEL 620 V, 2.2 OHM TYP., 2.7 A SUPERMESH3(TM) POWER MOSFET IN DPAK PACKAGE

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DocumentsAN2344+19
STD3N62K3 - MFG_DPAK(TO252-3)

STD3N62K3

Active
STMicroelectronics

N-CHANNEL 620 V, 2.2 OHM TYP., 2.7 A SUPERMESH3(TM) POWER MOSFET IN DPAK PACKAGE

Deep-Dive with AI

DocumentsAN2344+19

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD3N62K3
Current - Continuous Drain (Id) @ 25°C2.7 A
Drain to Source Voltage (Vdss)620 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds385 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs2.5 Ohm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.59
10$ 1.00
100$ 0.67
500$ 0.53
1000$ 0.48
Digi-Reel® 1$ 1.59
10$ 1.00
100$ 0.67
500$ 0.53
1000$ 0.48
Tape & Reel (TR) 2500$ 0.43
5000$ 0.40
7500$ 0.38
12500$ 0.38

Description

General part information

STD3N62K3 Series

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.