Specification	RJK03C1DPB-00#J5

Current - Continuous Drain (Id) (Ta)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	42 nC
Input Capacitance (Ciss) (Max)	6000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK
Power Dissipation (Max)	65 W
Rds On (Max)	2.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

RJK03C1DPB Series

Nch Single Power Mosfet 30V 60A 2.2Mohm Lfpak

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	FET Feature	FET Type	Technology	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature	Vgs (Max)	Package / Case	Rds On (Max)	Mounting Type	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK03C1DPB-00#J5	10 V	4.5 V	LFPAK	Schottky Diode (Body)	N-Channel	MOSFET (Metal Oxide)	60 A	42 nC	65 W	6000 pF	150 °C	20 V	SC-100 SOT-669	2.2 mOhm	Surface Mount	30 V

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