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STP100N10F7

STP100N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.0068 OHM TYP., 80 A STRIPFET F7 POWER MOSFET IN TO-220 PACKAGE

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STP100N10F7

STP100N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.0068 OHM TYP., 80 A STRIPFET F7 POWER MOSFET IN TO-220 PACKAGE

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Description

General part information

STP100N10F7 Series

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP100N10F7
Current - Continuous Drain (Id) (Tc)80 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)61 nC
Input Capacitance (Ciss) (Max)4369 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)150 W
Rds On (Max)8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

3D models and CAD resources for this part