
8ETH03-1
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 8A TO262-3

8ETH03-1
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 8A TO262-3
Description
General part information
8ETH03 Series
Diode 300 V 8A Through Hole TO-262-3
Technical Specifications
Parameters and characteristics for this part
| Specification | 8ETH03-1 |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage | 20 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | TO-262-3 |
| Reverse Recovery Time (trr) | 35 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) | 1.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources