IXTY1R6N50P

Obsolete

IXYS

MOSFET N-CH 500V 1.6A TO252

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Obsolete

IXYS

MOSFET N-CH 500V 1.6A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	IXTY1R6N50P

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.9 nC
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	43 W
Rds On (Max) @ Id, Vgs	6.5 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXTY1R4N60P TRL	50 W	5.2 nC	MOSFET (Metal Oxide)	10 V	5.5 V	140 pF	N-Channel	TO-252AA	30 V	9 Ohm	1.4 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	600 V
IXYS IXTY1R6N50P			MOSFET (Metal Oxide)	10 V	5.5 V	140 pF	N-Channel	TO-252AA	30 V	6.5 Ohm	1.6 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	500 V	43 W	3.9 nC
IXYS IXTY1R4N60P	50 W	5.2 nC	MOSFET (Metal Oxide)	10 V	5.5 V	140 pF	N-Channel	TO-252AA	30 V	9 Ohm	1.4 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 1.6A (Tc) 43W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available