IPD031N03M G

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Infineon Technologies

MOSFET N-CH 30V 90A TO252-3

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Unknown

Infineon Technologies

MOSFET N-CH 30V 90A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD031N03M G

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPD031N03M G	3.1 mOhm	MOSFET (Metal Oxide)	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.2 V	4.5 V 10 V	-55 °C	175 ░C	Surface Mount	20 V	51 nC	PG-TO252-3-11	90 A	N-Channel	5300 pF

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General part information

N-Channel 30 V 90A (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources