IXFK50N50

Obsolete

IXYS

MOSFET N-CH 500V 50A TO-264AA

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Obsolete

IXYS

MOSFET N-CH 500V 50A TO-264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK50N50

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	330 nC
Input Capacitance (Ciss) (Max) @ Vds	9400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	560 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Mounting Type	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
IXYS IXFK50N50	Through Hole	TO-264-3 TO-264AA	N-Channel	330 nC	500 V	10 V	MOSFET (Metal Oxide)	4.5 V	560 W	TO-264AA (IXFK)	50 A	-55 °C	150 °C	80 mOhm	9400 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 50A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources