CUHS15F30,H3F

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US2H

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US2H

Technical Specifications

Parameters and characteristics for this part

Specification	CUHS15F30,H3F

Capacitance @ Vr, F	170 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	50 çA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 ¯C
Package / Case	2-SMD, Flat Leads
Speed	200 mA, 500 ns
Supplier Device Package	US2H
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	520 mV

Part	Operating Temperature - Junction	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Capacitance @ Vr, F	Technology	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If
Toshiba Semiconductor and Storage CUHS15S40,H3F	150 °C	US2H	40 V	Surface Mount	200 µA	200 mA 500 ns	170 pF	Schottky	1.5 A	2-SMD Flat Leads
Toshiba Semiconductor and Storage CUHS15S30,H3F	150 ¯C	US2H	30 V	Surface Mount	500 µA	200 mA 500 ns	200 pF	Schottky	1.5 A	2-SMD Flat Leads	430 mV
Toshiba Semiconductor and Storage CUHS15F30,H3F	150 ¯C	US2H	30 V	Surface Mount	50 çA	200 mA 500 ns	170 pF	Schottky	1.5 A	2-SMD Flat Leads	520 mV

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General part information

Diode 30 V 1.5A Surface Mount US2H

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