RN2305,LF

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Technical Specifications

Parameters and characteristics for this part

Specification	RN2305,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SC-70
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Transistor Type	Package / Case	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Frequency - Transition
Toshiba Semiconductor and Storage RN2305,LF	500 nA	2.2 kOhm	47000 Ohms	80	100 mA	100 mW	PNP - Pre-Biased	SC-70 SOT-323	SC-70	300 mV	50 V	Surface Mount	200 MHz
Toshiba Semiconductor and Storage RN2305(TE85L,F)	500 nA	2.2 kOhm	47000 Ohms	80	100 mA	100 mW	PNP - Pre-Biased	SC-70 SOT-323	SC-70	300 mV	50 V	Surface Mount	200 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

Technical documentation and resources