IXBH32N300HV
ActiveDISC IGBT BIMSFT-VERYHIVOLT TO-247AD/ TUBE
IXBH32N300HV
ActiveDISC IGBT BIMSFT-VERYHIVOLT TO-247AD/ TUBE
Description
General part information
IXBH32N300HV Series
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount
Technical Specifications
Parameters and characteristics for this part
| Specification | IXBH32N300HV |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 280 A |
| Gate Charge | 142 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 Variant |
| Package Name | TO-247HV |
| Power - Max | 400 VA |
| Vce(on) (Max) | 3.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources