Specification	C2M1000170J-TR

Current - Continuous Drain (Id) (Tc)	5.3 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	13 nC, 13 nC
Input Capacitance (Ciss) (Max)	200 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	D2PAK-7, TO-263-7, D2PAK
Power Dissipation (Max)	78 W
Rds On (Max)	1.4 Ohm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	4 V

C2M1000170 Series

Part	Package Name	Package Leads	FET Type	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max) Negative	Vgs (Max) Positive
Wolfspeed, Inc. C2M1000170J	D2PAK D2PAK (7-Lead) D2PAK-7	7 Leads	N-Channel	5.3 A	4 V	13 nC 13 nC	200 pF	78 W	Surface Mount	SiCFET (Silicon Carbide)	20 V	1.4 Ohm	-55 °C	150 °C	1700 V	TO-263-7 (Straight Leads)	-10 V	25 V
Wolfspeed, Inc. C2M1000170D	TO-247-3		N-Channel	4.9 A	4 V	13 nC 13 nC	191 pF	69 W	Through Hole	SiCFET (Silicon Carbide)	20 V	1.1 Ohm	-55 °C	150 °C	1700 V	TO-247-3	-10 V	25 V
Wolfspeed, Inc. C2M1000170J-TR	D2PAK D2PAK-7 TO-263-7	7 Leads	N-Channel	5.3 A	4 V	13 nC 13 nC	200 pF	78 W	Surface Mount	SiCFET (Silicon Carbide)	20 V	1.4 Ohm	-55 °C	150 °C	1700 V		-10 V	25 V

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