Specification	PJX8603_R1_00001

Configuration	P-Channel Complementary, N
Current - Continuous Drain (Id) (Ta)	360 mA
Drain to Source Voltage (Vdss) (Option 1)	50 V
Drain to Source Voltage (Vdss) (Option 2)	60 V
Gate Charge (Max)	0.95 nC
Input Capacitance (Ciss) (Max)	51 pF, 36 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SOT-563
Power - Max (Ta)	300 mW
Rds On (Max)	1.5 Ohm, 6 Ohm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V, 1 V

NFET-60TENP Series

Part	Rds On (Max)	Mounting Type	Gate Charge (Max)	Technology	Current - Continuous Drain (Id) (Ta)	Package Name	Configuration	Drain to Source Voltage (Vdss) (Option 1)	Drain to Source Voltage (Vdss) (Option 2)	Vgs(th) (Max)	Power - Max (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Input Capacitance (Ciss) (Max)
Panjit International Inc. PJX8603_R1_00001	1.5 Ohm 6 Ohm	Surface Mount	0.95 nC	MOSFET (Metal Oxide)	360 mA	SOT-563	N P-Channel Complementary	50 V	60 V	1 V 2.5 V	300 mW	-55 °C	150 °C	SOT-563 SOT-666	36 pF 51 pF

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