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JAN2N3737UB/TR

JAN2N3737UB/TR

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Microchip Technology

SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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JAN2N3737UB/TR

JAN2N3737UB/TR

Active
Microchip Technology

SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

Find alt

Description

General part information

JAN2N3737UB-Transistor Series

This specification covers the performance requirements for NPN, silicon, switching 2N3735 and 2N3737 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/395. Two levels of product assurance are provided for each unencapsulated device type (JANHC and JANKC). RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N3737UB/TR
Current - Collector (Ic) (Max)1.5 A
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)20
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseNo Lead, 3-SMD
Package NameUB
Power - Max0.5 W
Qualification395, MIL-PRF-19500
Transistor TypeNPN
Vce Saturation (Max)900 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

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