JAN2N3741
Active80V 4A 25W NPN POWER BJT THT TO-66 ROHS COMPLIANT: YES
JAN2N3741
Active80V 4A 25W NPN POWER BJT THT TO-66 ROHS COMPLIANT: YES
Description
General part information
JAN2N3741-Transistor Series
This specification covers the performance requirements for power PNP silicon 2N3740 and 2N3741 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/441 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/441. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for quality levels JANTXV, JANS, JANHC, and JANKC. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N3741 |
|---|---|
| Current - Collector (Ic) (Max) | 4 A |
| Current - Collector Cutoff (Max) | 10 µA |
| DC Current Gain (hFE) (Min) | 30 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-66-2, TO-213AA |
| Package Name | TO-66 (TO-213AA) |
| Power - Max | 25 W |
| Qualification | MIL-PRF-19500, 441 |
| Supplier Device Package | TO-66, TO-213AA |
| Transistor Type | PNP |
| Vce Saturation (Max) | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
Pricing
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