NSF040120D7A1J
Active1200 V, 40 MΩ, N-CHANNEL SIC MOSFET
NSF040120D7A1J
Active1200 V, 40 MΩ, N-CHANNEL SIC MOSFET
Description
General part information
NSF040120D7A1 Series
The NSF040120D7A1 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSF040120D7A1J |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 54 A, 54 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 81 nC |
| Input Capacitance (Ciss) (Max) | 1980 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | TO-236-7, D2PAK |
| Power Dissipation (Max) | 250 W |
| Rds On (Max) | 60 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 2.9 V |
Pricing
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