Specification	SPP10N10L

Current - Continuous Drain (Id) (Tc)	10.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	444 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	PG-TO220-3-1
Power Dissipation (Max)	50 W
Rds On (Max)	154 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

SPP10N Series

Part	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Rds On (Max)	Package Name	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
INFINEON SPP10N10	4 V	10.3 A	10 V	N-Channel	TO-220-3	170 mOhm	PG-TO220-3-1	19.4 nC	100 V	Through Hole	20 V	-55 °C	175 °C	50 W	426 pF	MOSFET (Metal Oxide)
INFINEON SPP10N10L	2 V	10.3 A		N-Channel	TO-220-3	154 mOhm	PG-TO220-3-1	22 nC	100 V	Through Hole	20 V	-55 °C	175 °C	50 W	444 pF	MOSFET (Metal Oxide)	10 V	4.5 V

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