Specification	SI3469DV-T1-GE3

Current - Continuous Drain (Id) (Ta)	5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	30 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	1.14 W
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI3469 Series

Part	Gate Charge (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Package Name	Mounting Type	Vgs (Max)	Vgs(th) (Max)
Vishay Dale SI3469DV-T1-GE3	30 nC	1.14 W	5 A	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	20 V	P-Channel	10 V	4.5 V	30 mOhm	6-TSOP	Surface Mount	20 V	3 V

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