Description
General part information
XGLD60R190 Series
The IGLD60R190D1S enables more compact topologies at higher efficiency and higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in contemporary USB-Cadapters and chargers.
Technical Specifications
Parameters and characteristics for this part
| Specification | IGLD60R190D1SAUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 10 A |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 157 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-LDFN Exposed Pad |
| Package Name | PG-LSON-8-1 |
| Power Dissipation (Max) | 62.5 W |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | -10 V |
| Vgs(th) (Max) | 1.6 V |
Pricing
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CAD
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Documents
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