Specification	TTC1949-Y,LF

Current - Collector (Ic) (Max)	500 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	S-Mini
Power - Max	200 mW
Transistor Type	NPN
Vce Saturation (Max)	400 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

TTC1949 Series

Bipolar Transistors, NPN Bipolar Transistor, 50 V, 0.5 A, SOT-346(S-Mini)

Part	Current - Collector (Ic) (Max)	Frequency - Transition	Package Name	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	DC Current Gain (hFE) (Min)	Current - Collector Cutoff (Max)	Operating Temperature	Power - Max	Package / Case	Mounting Type	Vce Saturation (Max)
Toshiba Semiconductor and Storage TTC1949-GR,LF	500 mA	100 MHz	S-Mini	50 V	NPN	180	100 nA	150 °C	200 mW	SC-59 SOT-23-3 TO-236-3	Surface Mount	400 mV
Toshiba Semiconductor and Storage TTC1949-Y,LF	500 mA	100 MHz	S-Mini	50 V	NPN	120	100 nA	150 °C	200 mW	SC-59 SOT-23-3 TO-236-3	Surface Mount	400 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources