
RN2703,LF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP X 2 BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 22 KΩ/22 KΩ, SOT-353(USV)

RN2703,LF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP X 2 BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 22 KΩ/22 KΩ, SOT-353(USV)
Description
General part information
RN2703 Series
Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 22 kΩ/22 kΩ, SOT-353(USV)
Technical Specifications
Parameters and characteristics for this part
| Specification | RN2703,LF |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 70 |
| Frequency - Transition | 200 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-353, SC-70-5, 5-TSSOP |
| Package Name | USV |
| PNP Count | 2 |
| Power - Max | 200 mW |
| Resistor - Base (R1) Resistance | 22 kOhm |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Transistor Configuration | Pre-Biased, Dual |
| Transistor Type | PNP |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Surface Mount Small Signal Transistor (BJT) Precautions for use
Mini catalog Introduction to Toshiba Bias Resistor Built-in Transistors (Digital Transistors)
RN2703 Data sheet/Japanese
RN2703 Data sheet/English
Selection Guide Small Signal 2025 Rev1.0
Basics of Bias Resistor Built-in Transistors (BRT)
Electrical Characteristics of Bias Resistor Built-In Transistors (BRTs)