Specification	IPP039N10N5AKSA1

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	95 nC
Input Capacitance (Ciss) (Max)	7000 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	PG-TO220-3-1
Power Dissipation (Max)	188 W
Rds On (Max)	3.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.8 V

IPP039 Series

Part	Power Dissipation (Max)	Technology	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Mounting Type	Package Name	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case
INFINEON IPP039N10N5AKSA1	188 W	MOSFET (Metal Oxide)	3.8 V	6 V	10 V	100 V	7000 pF	3.9 mOhm	20 V	100 A	95 nC	Through Hole	PG-TO220-3-1	N-Channel	-55 °C	175 °C	TO-220-3
INFINEON IPP039N04LGXKSA1	94 W	MOSFET (Metal Oxide)	2 V	4.5 V	10 V	40 V	6100 pF	3.9 mOhm	20 V	80 A	78 nC	Through Hole	PG-TO220-3-1	N-Channel	-55 °C	175 °C	TO-220-3

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