Specification	IXDE504D2T/R

Channel Type	Independent
Current - Peak Output (Sink)	4 A
Current - Peak Output (Source)	4 A
Driven Configuration	Low-Side
Fall Time (Typ)	8 ns
Gate Channel	N-Channel, P-Channel
Gate Type	IGBT, N-Channel, P-Channel MOSFET, MOSFET
Input Type	Inverting
Logic Voltage - VIH	3 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-VDFN Exposed Pad
Package Length	4 mm
Package Name	8-DFN
Package Width	5 mm
Rise Time (Typ)	9 ns
Voltage - Supply (Maximum)	30 VDC
Voltage - Supply (Minimum)	4.5 V

IXDE504 Series

Part	Gate Type	Driven Configuration	Package / Case	Input Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Logic Voltage - VIL	Logic Voltage - VIH	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Gate Channel	Mounting Type	Package Name	Package Width	Package Length	Rise Time (Typ)	Fall Time (Typ)	Number of Drivers	Channel Type	Operating Temperature (Min)	Operating Temperature (Max)
LITTELFUSE IXDE504D2	IGBT MOSFET N-Channel P-Channel MOSFET	Low-Side	8-VDFN Exposed Pad	Inverting	4 A	4 A	0.8 V	3 V	4.5 V	30 VDC	N-Channel P-Channel	Surface Mount	8-DFN	5 mm	4 mm	9 ns	8 ns	2	Independent	-55 °C	150 °C
LITTELFUSE IXDE504D2T/R	IGBT MOSFET N-Channel P-Channel MOSFET	Low-Side	8-VDFN Exposed Pad	Inverting	4 A	4 A	0.8 V	3 V	4.5 V	30 VDC	N-Channel P-Channel	Surface Mount	8-DFN	5 mm	4 mm	9 ns	8 ns	2	Independent	-55 °C	150 °C
LITTELFUSE IXDE504PI	IGBT MOSFET N-Channel P-Channel MOSFET	Low-Side		Inverting	4 A	4 A	0.8 V	3 V	4.5 V	30 VDC	N-Channel P-Channel	Through Hole	8-DIP	7.62 mm	0.3 in	9 ns	8 ns	2	Independent	-55 °C	150 °C
LITTELFUSE IXDE504SIAT/R	IGBT MOSFET N-Channel P-Channel MOSFET	Low-Side		Inverting	4 A	4 A	0.8 V	3 V	4.5 V	30 VDC	N-Channel P-Channel	Surface Mount	8-SOIC	3.9 mm	0.154 in	9 ns	8 ns	2	Independent	-55 °C	150 °C
LITTELFUSE IXDE504SIA	IGBT MOSFET N-Channel P-Channel MOSFET	Low-Side		Inverting	4 A	4 A	0.8 V	3 V	4.5 V	30 VDC	N-Channel P-Channel	Surface Mount	8-SOIC	3.9 mm	0.154 in	9 ns	8 ns	2	Independent	-55 °C	150 °C

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