STU11N65M2
ObsoletePOWER MOSFET, N CHANNEL, 7 A, 650 V, 0.6 OHM, 10 V, 3 V ROHS COMPLIANT: YES
STU11N65M2
ObsoletePOWER MOSFET, N CHANNEL, 7 A, 650 V, 0.6 OHM, 10 V, 3 V ROHS COMPLIANT: YES
Description
General part information
STU11 Series
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.Extremely low gate chargeLower RDS(on)x area vs previous generationLow gate input resistance100% avalanche testedZener-protected
Technical Specifications
Parameters and characteristics for this part
| Specification | STU11N65M2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 7 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12.5 nC |
| Input Capacitance (Ciss) (Max) | 410 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | TO-251 (IPAK) |
| Power Dissipation (Max) | 85 W |
| Rds On (Max) | 670 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
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