STP33N60M6

Active

STMicroelectronics

N-CHANNEL 600 V, 105 MOHM TYP., 25 A MDMESH M6 POWER MOSFET IN A TO-220 PACKAGE

Find alt

Alpha

STP33N60M6

Active

STMicroelectronics

N-CHANNEL 600 V, 105 MOHM TYP., 25 A MDMESH M6 POWER MOSFET IN A TO-220 PACKAGE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

Mdmesh M6 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	STP33N60M6

Current - Continuous Drain (Id) (Tc)	25 A, 25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	33.4 nC
Input Capacitance (Ciss) (Max)	1515 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220
Power Dissipation (Max)	190 W
Rds On (Max)	125 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	4.75 V

Mdmesh M6 Series

N-channel 600 V, 255 mOhm typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

Part	FET Type	Gate Charge (Max)	Package Name	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Package Width	Package Length
STMicroelectronics STWA68N60M6	N-Channel	106 nC	TO-247 Long Leads	4.75 V	600 V	Through Hole	390 W	TO-247-3	25 V	63 A	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	41 mOhm	4360 pF
STMicroelectronics STP33N60M6	N-Channel	33.4 nC	TO-220	4.75 V	600 V	Through Hole	190 W	TO-220-3	25 V	25 A 25 A	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	125 mOhm	1515 pF
STMicroelectronics STL19N60M6	N-Channel	16.8 nC	PowerFlat™	4.75 V	600 V	Surface Mount	90 W	4-PowerVDFN 8-PowerVDFN	25 V	11 A	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	308 mOhm	650 pF	8 mm	8 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part