Specification	XPQR3004PB,LXHQ

Current - Continuous Drain (Id) (Ta)	400 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	295 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	26910 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerBSFN
Package Name	L-TOGL™
Power Dissipation (Max)	750 W
Qualification	AEC-Q101
Rds On (Max)	0.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

XPQR3004PB Series

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 400 A, 0.00030 Ω@10V, L-TOGL

Part	Qualification	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Operating Temperature	Mounting Type	Package Name	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Grade	Rds On (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	FET Type	Gate Charge (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)
Toshiba Semiconductor and Storage XPQR3004PB,LXHQ	AEC-Q101	20 V	8-PowerBSFN	40 V	MOSFET (Metal Oxide)	175 °C	Surface Mount	L-TOGL™	3 V	26910 pF	Automotive	0.3 mOhm	750 W	400 A	N-Channel	295 nC	6 V	10 V

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