PSMN1R0-100ASFJ
ActiveNexperia USA Inc.
NEXTPOWER 100 V, 0.99 MOHM, N-CHANNEL MOSFET IN CCPAK1212 PACKAGE
PSMN1R0-100ASFJ
ActiveNexperia USA Inc.
NEXTPOWER 100 V, 0.99 MOHM, N-CHANNEL MOSFET IN CCPAK1212 PACKAGE
Description
General part information
PSMN1R0-100ASF Series
NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN1R0-100ASFJ |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 460 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 539 nC |
| Input Capacitance (Ciss) (Max) | 33624 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Features | Exposed Pad |
| Package Length | 0.37 in |
| Package Name | 12-BESOP, CCPAK1212 |
| Package Width | 9.4 mm |
| Power Dissipation (Max) | 1.55 kW |
| Rds On (Max) | 0.99 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Half-bridge MOSFET switching and its impact on EMC
Failure signature of Electrical Overstress on Power MOSFETs
Power MOSFET gate driver fundamentals
Understanding the MOSFET peak drain current rating
Paralleling power MOSFETs in high power applications
Designing in MOSFETs for safe and reliable gate-drive operation
T12_SOT8000A_PSMN1R0-100ASF_Nexperia_Quality_Reliability_document
Understanding power MOSFET data sheet parameters
Using Power MOSFET Zth Curves
LFPAK MOSFET thermal design guide
RC Thermal Models
Maximum continuous currents in NEXPERIA LFPAK power MOSFETs
Plastic, surface mounted copper clip package (CCPAK1212);13 terminals; 2.0 mm pitch, 12 mm x 12 mm x 2.5 mm body
LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout
大電力アプリケーションにおけるパワーMOSFETの並列接続