Specification	SQS481ENW-T1_GE3

Current - Continuous Drain (Id) (Tc)	4.7 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	11 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	385 pF, 385 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	62.5 W
Qualification	AEC-Q101
Rds On (Max)	1.095 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

SQS481 Series

Part	Technology	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs (Max)	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	FET Type	Power Dissipation (Max)	Rds On (Max)	Grade
Vishay Dale SQS481ENW-T1_GE3	MOSFET (Metal Oxide)	PowerPAK® 1212-8	-55 °C	175 °C	Surface Mount	20 V	AEC-Q101	10 V	PowerPAK® 1212-8	150 V	4.7 A	11 nC	385 pF 385 pF	3.5 V	P-Channel	62.5 W	1.095 Ohm	Automotive

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