IDD15E60BUMA2

Obsolete

Infineon Technologies

DIODE GP 600V 29.2A TO252-3

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Obsolete

Infineon Technologies

DIODE GP 600V 29.2A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDD15E60BUMA2

Current - Average Rectified (Io)	29.2 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	87 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO252-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Speed
Infineon Technologies IDD15E60BUMA1	PG-TO252-3	50 µA	Standard	600 V	29.2 A	Surface Mount	87 ns	2 V	-40 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 mA 500 ns
Infineon Technologies IDD15E60BUMA2	PG-TO252-3	50 µA	Standard	600 V	29.2 A	Surface Mount	87 ns	2 V	-55 C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 29.2A Surface Mount PG-TO252-3

Technical documentation and resources