IXTV96N25T

Obsolete

IXYS

MOSFET N-CH 250V 96A PLUS220

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Obsolete

IXYS

MOSFET N-CH 250V 96A PLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXTV96N25T

Current - Continuous Drain (Id) @ 25°C	96 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	114 nC
Input Capacitance (Ciss) (Max) @ Vds	6100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max)	625 W
Rds On (Max) @ Id, Vgs [Max]	29 mOhm
Supplier Device Package	PLUS220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type
IXYS IXTV96N25T	30 V	96 A	6100 pF	250 V	Through Hole	TO-220-3 Short Tab	114 nC	29 mOhm	PLUS220	625 W	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 96A (Tc) 625W (Tc) Through Hole PLUS220

Technical documentation and resources