IPL60R299CPAUMA1

LTB

Infineon Technologies

MOSFET N-CH 600V 11.1A 4VSON

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LTB

Infineon Technologies

MOSFET N-CH 600V 11.1A 4VSON

Technical Specifications

Parameters and characteristics for this part

Specification	IPL60R299CPAUMA1

Current - Continuous Drain (Id) @ 25°C	11.1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	299 mOhm
Supplier Device Package	PG-VSON-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
Infineon Technologies IPL60R299CPAUMA1	PG-VSON-4	600 V	3.5 V	Surface Mount	20 V	96 W	299 mOhm	N-Channel	150 °C	-40 °C	MOSFET (Metal Oxide)	22 nC	11.1 A	10 V	4-PowerTSFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.98
	Digi-Reel®	1	$ 3.98
	Tape & Reel (TR)	3000	$ 1.39

General part information

N-Channel 600 V 11.1A (Tc) 96W (Tc) Surface Mount PG-VSON-4

Technical documentation and resources