STN3P10F6
ActiveSTMicroelectronics
P-CHANNEL -100 V, 0.136 OHM TYP., -3 A STRIPFET F6 POWER MOSFET IN A SOT-223 PACKAGE
STN3P10F6
ActiveSTMicroelectronics
P-CHANNEL -100 V, 0.136 OHM TYP., -3 A STRIPFET F6 POWER MOSFET IN A SOT-223 PACKAGE
Description
General part information
STN3P10F6 Series
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Technical Specifications
Parameters and characteristics for this part
| Specification | STN3P10F6 |
|---|---|
| Current - Continuous Drain (Id) | 3 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 16.5 nC |
| Input Capacitance (Ciss) (Max) | 900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | SOT-223 |
| Power Dissipation (Max) | 3.3 W |
| Rds On (Max) | 180 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part