Specification	CTS521,L3F

Capacitance	25 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Package / Case	SOD-882
Package Name	CST2
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	30 V
Voltage - Forward (Vf) (Max)	500 mV

CTS521 Series

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOD-882(CST2)

Part	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Voltage - Forward (Vf) (Max)	Mounting Type	Current - Reverse Leakage	Package Name	Operating Temperature - Junction (Max)	Package / Case	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Technology	Capacitance
Toshiba Semiconductor and Storage CTS521,L3F	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	500 mV	Surface Mount	30 µA	CST2	125 °C	SOD-882	30 V	200 mA	Schottky	25 pF

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