Specification	IPA60R099C6XKSA1

Current - Continuous Drain (Id) (Tc)	37.9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	119 nC
Input Capacitance (Ciss) (Max)	2660 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	PG-TO220-FP
Power Dissipation (Max)	35 W
Rds On (Max)	99 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPA60R099 Series

Part	Vgs(th) (Max)	Rds On (Max)	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) (Tc)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package Name
INFINEON IPA60R099C6XKSA1	3.5 V	99 mOhm	N-Channel	TO-220-3 Full Pack	600 V	MOSFET (Metal Oxide)	37.9 A	Through Hole	10 V	20 V	35 W	-55 °C	150 °C	119 nC	2660 pF	PG-TO220-FP
INFINEON IPA60R099P7XKSA1	4 V	99 mOhm	N-Channel	TO-220-3 Full Pack	600 V	MOSFET (Metal Oxide)	31 A	Through Hole	10 V	20 V	29 W	-55 °C	150 °C	45 nC	1952 pF	PG-TO220-FP

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