Specification	SISF04DN-T1-GE3

Channel Count	2
Configuration	N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) (Ta)	30 A
Current - Continuous Drain (Id) (Tc)	108 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	2600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8SCD
Package Name	PowerPAK® 1212-8SCD
Power - Max (Ta)	5.2 W
Power - Max (Tc)	69.4 W
Rds On (Max)	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.3 V

SISF04 Series

Part	Package / Case	Vgs(th) (Max)	Gate Charge (Max)	Technology	Input Capacitance (Ciss) (Max)	Rds On (Max)	Mounting Type	Channel Count	Configuration	Power - Max (Ta)	Power - Max (Tc)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SISF04DN-T1-GE3	PowerPAK® 1212-8SCD	2.3 V	60 nC	MOSFET (Metal Oxide)	2600 pF	4 mOhm	Surface Mount	2	N-Channel (Dual) Common Drain	5.2 W	69.4 W	108 A	30 A	30 V	PowerPAK® 1212-8SCD	-55 °C	150 °C

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