UG54G A0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A DO201AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	UG54G A0G

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	20 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.05 V

Part	Technology	Speed	Current - Average Rectified (Io)	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Grade	Qualification
Taiwan Semiconductor Corporation UG54G A0G	Standard	200 mA 500 ns	5 A	Through Hole	DO-201AD	10 µA	DO-201AD Axial	175 ░C	-55 C	200 V	1.05 V	20 ns
Taiwan Semiconductor Corporation UG54GH	Standard	200 mA 500 ns	5 A	Through Hole	DO-201AD	10 µA	DO-201AD Axial	175 ░C	-55 C	200 V	1.05 V	20 ns	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 5A Through Hole DO-201AD

Technical documentation and resources