IPAN60R360PFD7SXKSA1

Obsolete

INFINEON

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK NARROW LEAD PACKAGE; 360 MOHM; PRICE/PERFORMANCE

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IPAN60R360PFD7SXKSA1

Obsolete

INFINEON

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK NARROW LEAD PACKAGE; 360 MOHM; PRICE/PERFORMANCE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IPAN60 Series

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPAN60R360PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPAN60R360PFD7S in a TO-220 FullPAK NL package achieves low switching losses, featuring RDS(on)of 360mOhm. The 600V CoolMOS™ PFD7 comes with an integrated fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Technical Specifications

Parameters and characteristics for this part

Specification	IPAN60R360PFD7SXKSA1

Current - Continuous Drain (Id) (Tc)	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	12.7 nC
Input Capacitance (Ciss) (Max)	534 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-220-3 Full Pack
Package Name	PG-TO220-FP
Power Dissipation (Max)	23 W
Rds On (Max)	360 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPAN60 Series

Part	Technology	Input Capacitance (Ciss) (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Vgs (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case
INFINEON IPAN60R800CEXKSA1	MOSFET (Metal Oxide)	373 pF	N-Channel	8.4 A	17.2 nC	20 V	3.5 V	600 V	Through Hole	10 V	27 W	800 mOhm	PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack
INFINEON IPAN60R360PFD7SXKSA1	MOSFET (Metal Oxide)	534 pF	N-Channel	10 A	12.7 nC	20 V	4.5 V	650 V	Through Hole	10 V	23 W	360 mOhm	PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack
INFINEON IPAN60R360P7SXKSA1	MOSFET (Metal Oxide)	555 pF	N-Channel	9 A	13 nC	20 V	4 V	650 V	Through Hole	10 V	22 W	360 mOhm	PG-TO220 Full Pack	-40 °C	150 °C	TO-220-3 Full Pack
INFINEON IPAN60R180P7SXKSA1	MOSFET (Metal Oxide)	1081 pF	N-Channel	18 A	25 nC	20 V	4 V	600 V	Through Hole	10 V	26 W	180 mOhm	PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack
INFINEON IPAN60R210PFD7SXKSA1	MOSFET (Metal Oxide)	1015 pF	N-Channel	16 A	23 nC	20 V	4.5 V	650 V	Through Hole	10 V	25 W	210 mOhm	PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack
INFINEON IPAN60R650CEXKSA1	MOSFET (Metal Oxide)	440 pF	N-Channel	9.9 A	20.5 nC	20 V	3.5 V	600 V	Through Hole	10 V	28 W	650 mOhm	PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack
INFINEON IPAN60R125PFD7SXKSA1	MOSFET (Metal Oxide)	1503 pF	N-Channel	25 A 25 A	36 nC 36 nC	20 V	4.5 V	650 V	Through Hole	10 V	32 W	125 mOhm	PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack
INFINEON IPAN60R600P7SXKSA1	MOSFET (Metal Oxide)	363 pF	N-Channel	6 A	9 nC	20 V	4 V	650 V	Through Hole	10 V	21 W	600 mOhm	PG-TO220 Full Pack	-40 °C	150 °C	TO-220-3 Full Pack

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IPAN60R360PFD7SXKSA1 | Datasheet