IXTH1N100

Obsolete

LITTELFUSE

MOSFET N-CH 1000V 1.5A TO247

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IXTH1N100

Obsolete

LITTELFUSE

MOSFET N-CH 1000V 1.5A TO247

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTH1 Series

Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH1N100

Current - Continuous Drain (Id) (Tc)	1.5 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	23 nC
Input Capacitance (Ciss) (Max)	480 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 (IXTH)
Power Dissipation (Max)	60 W
Rds On (Max)	11 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IXTH1 Series

Disc Mosfet N-CH Depl Mode-Std TO-247AD

Part	Vgs(th) (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Package Name	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Mounting Type	Power Dissipation (Max)	Rds On (Max)	FET Feature	Current - Continuous Drain (Id) (Tj)
LITTELFUSE IXTH1N100	4.5 V	23 nC	10 V	20 V	1.5 A	480 pF	TO-247 (IXTH)	1000 V	N-Channel	TO-247-3	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	60 W	11 Ohm
LITTELFUSE IXTH1N170DHV	4.5 V	47 nC	0 V	20 V		3090 pF	TO-247HV	1700 V	N-Channel	TO-247-3 Variant	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	290 W	16 Ohm	Depletion Mode	1 A
LITTELFUSE IXTH1N170DHV	4.5 V	47 nC	0 V	20 V		3090 pF	TO-247HV	1700 V	Depletion Mode N-Channel	TO-247-3 Variant	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	290 W	16 Ohm		1 A
LITTELFUSE IXTH1N300P3HV	4 V	30.6 nC	10 V	20 V	1 A	895 pF	TO-247HV	3000 V	N-Channel	TO-247-3 Variant	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	195 W	50 Ohm
LITTELFUSE IXTH1N250	4 V	41 nC			1.5 A	1660 pF	TO-247AD	2500 V	N-Channel	TO-247-3			MOSFET (Metal Oxide)	Through Hole		40 Ohm
LITTELFUSE IXTH1N450HV	6 V	46 nC	10 V	20 V	1 A	1700 pF	TO-247HV	4500 V	N-Channel	TO-247-3 Variant	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	520 W	80 Ohm
LITTELFUSE IXTH1N200P3	4 V	23.5 nC	10 V	20 V	1 A	646 pF	TO-247 (IXTH)	2000 V	N-Channel	TO-247-3	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	125 W	40 Ohm
LITTELFUSE IXTH1N300P3HV	4 V	30.6 nC	10 V	20 V	1 A	895 pF	TO-247HV	3000 V	N-Channel	TO-247-3 Variant	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	195 W	50 Ohm
LITTELFUSE IXTH1N250	4 V	41 nC			1.5 A	1660 pF	TO-247AD	2500 V	N-Channel	TO-247-3			MOSFET (Metal Oxide)	Through Hole		40 Ohm
LITTELFUSE IXTH1N450HV	6 V	46 nC	10 V	20 V	1 A	1700 pF	TO-247HV	4500 V	N-Channel	TO-247-3 Variant	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	520 W	80 Ohm

Pricing

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