Specification	SSM3J358R,LF

Current - Continuous Drain (Id) (Ta)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	8 V
FET Type	P-Channel
Gate Charge (Max)	38.5 nC
Input Capacitance (Ciss) (Max)	1331 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Package Name	SOT-23F
Power Dissipation (Max)	1 W
Rds On (Max)	22.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	1 V

SSM3J358R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0253 Ω@4.5V, SOT-23F

Part	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max)	Technology	FET Type	Power Dissipation (Max)	Operating Temperature	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Package Name	Gate Charge (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)
Toshiba Semiconductor and Storage SSM3J358R,LF	SOT-23-3 Flat Leads	20 V	Surface Mount	10 V	1331 pF	MOSFET (Metal Oxide)	P-Channel	1 W	150 °C	8 V	1.8 V	1 V	SOT-23F	38.5 nC	22.1 mOhm	6 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources