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TK56A12N1 - 12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0075 Ω@10V, TO-220SIS, U-MOSⅧ-H

TK10A60W5,S5VX

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Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.45 Ω@10V, TO-220SIS, DTMOSⅣ

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TK56A12N1 - 12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0075 Ω@10V, TO-220SIS, U-MOSⅧ-H

TK10A60W5,S5VX

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.45 Ω@10V, TO-220SIS, DTMOSⅣ

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Description

General part information

TK10A60W5 Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.45 Ω@10V, TO-220SIS, DTMOSⅣ

Technical Specifications

Parameters and characteristics for this part

SpecificationTK10A60W5,S5VX
Current - Continuous Drain (Id) (Ta)9.7 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)25 nC
Input Capacitance (Ciss) (Max)720 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220SIS
Power Dissipation (Max)30 W
Rds On (Max)450 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TK10A60W5 Data sheet/English
Derating of the MOSFET Safe Operating Area
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Hints and Tips for Thermal Design part3
Motor Control (Vacuum Cleaners)
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Avalanche energy calculation
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Calculating the Temperature of Discrete Semiconductor Devices
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Maximum Ratings: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
MOSFET SPICE model grade
MOSFET Secondary Breakdown
Structures and Characteristics: Power MOSFET Application Notes
Simplified CFD Model Application Note
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
MOSFET Self-Turn-On Phenomenon
Selection Guide MOSFETs 2025 Rev1.0
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
TK10A60W5 Data sheet/Japanese
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Resonant Circuits and Soft Switching