Specification	SSM3J135TU,LF

Current - Continuous Drain (Id) (Ta)	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	4.6 nC
Input Capacitance (Ciss) (Max)	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-SMD, Flat Leads
Package Name	UFM
Power Dissipation (Max)	500 mW
Rds On (Max)	103 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SSM3J135TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -3.0 A, 0.103 Ω@4.5V, SOT-323F(UFM)

Part	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Package Name	Package / Case	Gate Charge (Max)	FET Type	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Rds On (Max)	Vgs (Max)	Operating Temperature
Toshiba Semiconductor and Storage SSM3J135TU,LF	3 A	270 pF	1 V	UFM	3-SMD Flat Leads	4.6 nC	P-Channel	Surface Mount	4.5 V	1.5 V	500 mW	MOSFET (Metal Oxide)	20 V	103 mOhm	8 V	150 °C

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