BSP122,115
ActiveNexperia USA Inc.
MOSFETS N-CHANNEL VERTICAL D-MOS LOGIC LEVEL FET
BSP122,115
ActiveNexperia USA Inc.
MOSFETS N-CHANNEL VERTICAL D-MOS LOGIC LEVEL FET
Description
General part information
BSP122 Series
N-channel vertical D-MOS logic level FET
Technical Specifications
Parameters and characteristics for this part
| Specification | BSP122,115 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 550 mA |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On) | 2.4 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | SOT-223 |
| Power Dissipation (Max) | 1.5 W |
| Rds On (Max) | 2.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Wave soldering profile
LFPAK MOSFET thermal design guide, Chinese version
Power MOSFET single-shot and repetitive avalanche ruggedness rating
Understanding power MOSFET data sheet parameters
Power MOSFET frequently asked questions and answers
Reflow soldering profile
Nexperia package poster
plastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body
RC Thermal Models
SC-73; Reel pack for SMD, 7"; Q3/T4 product orientation
Failure signature of Electrical Overstress on Power MOSFETs
LFPAK MOSFET thermal design guide - Part 2
Questions about package outline drawings
Understanding power MOSFET data sheet parameters
plastic, surface-mounted package with increased heatsink; 4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body
Using power MOSFETs in parallel
N-channel enhancement mode vertical D-MOS transistor