Specification	IPD105N03LGATMA1

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14 nC
Input Capacitance (Ciss) (Max)	1500 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3-11
Power Dissipation (Max)	38 W
Rds On (Max)	10.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

IPD105N Series

Part	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Vgs (Max)	Vgs(th) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Mounting Type	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
INFINEON IPD105N03LGATMA1	1500 pF	38 W	35 A	10.5 mOhm	20 V	2.2 V	14 nC	30 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 °C	PG-TO252-3-11	10 V	4.5 V
INFINEON IPD105N04LGBTMA1	1900 pF	42 W	40 A	10.5 mOhm	20 V	2 V	23 nC	40 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 °C	PG-TO252-3	10 V	4.5 V

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